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Thin solid films
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Updated: 4 days 17 hours ago

Transparent heaters based on solution-processed indium tin oxide nanoparticles

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Kiju, Im , Kyoungah, Cho , Jonghyun, Kim , Sangsig, Kim

We demonstrate transparent heaters constructed on glass substrates using solution-processed indium tin oxide (ITO) nanoparticles (NPs) and their heating capability. The heat-generating characteristics of the heaters depended significantly on the sintering temperature at which the ITO NPs deposited on a glass substrate by spin-coating were transformed thermally into a solid film. The steady-state temperature of the ITO NP film sintered at 400°C was 163°C at a bias voltage of 20V, and the defrosting capability of the film was confirmed by using dry-ice.

Growth and characterization of well-aligned densely-packed rutile TiO2 nanocrystals on sapphire (100) and (012) substrates by reactive magnetron sputtering

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
C.N., Yeh , Y.M., Chen , C.A., Chen , Y.S., Huang , D.S., Tsai , ...

Well-aligned densely-packed rutile phase TiO2 nanocrystals (NCs) have been grown on sapphire (100) and (012) substrates by reactive magnetron sputtering using Ti metal target. The surface morphology, structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. FESEM micrographs reveal the growth of vertically aligned NCs on sapphire (100), whereas the NCs on sapphire (012) were grown with a tilt angle of ∼33° from the normal to substrate. The XRD results reveal TiO2 NCs with either (002) orientation on sapphire (100) substrate or (101)...

Fabrication of periodically polarity-inverted ZnO structures on (0001) Al2O3

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
J.S., Park , T., Minegishi , S., Ahn , S.H., Park , S.K., Hong , ...

Two-dimensional periodically polarity-inverted (PPI) ZnO structures were fabricated on (0001) Al2O3 substrates using plasma assisted molecular beam epitaxy. Holographic lithography was carried out for the realization of nanometer-scale patterns of CrN which was obtained by nitridation of Cr metal. The PPI ZnO structures consisted of Zn-polar regions grown on CrN and O-polar regions grown on Zn-terminated AlN/Al2O3. The periodical polarity inversion was confirmed by voltage-piezo response curves and contrast in the piezo response microscopy images. A diffraction pattern of the fabricated PPI ZnO sample was observed when a He-Ne laser beam was incident on the sample surface.

Electron mobility of 4, 7-diphenyl-1, 10-phenanthroline doped 8-hydroxyquinolinonate-lithium investigated by using space-charge-limited currents

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Khizar-ul-Haq , M.A., Khan , X.Y., Jiang , X.W., Zhang , Z.L., Zhang

The electron mobility of 4, 7- diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinato-lithium (Liq) at various thickness (50-300nm) has been estimated by using space-charge-limited currents measurements. It has been observed that the electron mobility of doped BPhen (30wt% Liq:BPhen) approaches its true value when the thickness is more than 150nm. The electron mobility of 30wt% Liq:BPhen at 300nm is found to be ∼6.7×10−3cm2/Vs (at 0.3MV/ cm) with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen (3.4×10−4cm2/Vs) measured by space-charge-limited currents. For thickness typical of organic light-emitting devices, the electron mobility of doped...

Synthesis of carbon-doped TiO2 nanoparticles using CO2 decomposition by thermal plasma

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Jung-Wan, Park , Dong-Wook, Kim , Hong-Sun, Seon , Kyo-Seon, Kim , Dong-Wha, Park

This study examined the synthesis of carbon-doped titanium dioxide using TiCl4 and CO2 as titanium and carbon sources, respectively, by thermal plasma at atmospheric pressure. The effect of the CO2 gas flow rate on the preparation of TiO2 was investigated. The results showed that the decomposition rate of CO2 was 90% at a CO2 gas flow rate of 1L/min. When TiCl4 was added to produce TiO2, the decomposition rate of CO2 reached 95% at a CO2 gas flow rate of 1L/min. The resulting powders contained mixed anatase and rutile phases with particle sizes ranging from 20 to 50nm. The carbon...

Deposition pressure and rate effects on the microstructure and magnetic properties of sputtered tape media

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Jixiong, Han , Mike, Hintz , Joseph, Sexton , Joseph, Skorjanec , Garry, Lundstrom

Sputtered magnetic tape media were prepared by DC magnetron sputtering on polyimide substrates at different deposition conditions. The structure, texture and magnetic properties of the sputtered films were systematically studied using transmission electron microscopy, X-ray diffraction and alternating gradient magnetometer. The microstructure of sputtered media is greatly influenced by the deposition conditions, such as deposition pressure and rate. High sputtering pressure and slow deposition rate produced high coercivity and low delta M films. The sputtered tape media has desired grain segregation structure which is essential for low-noise media fabrication. X-ray diffraction analysis revealed that the stress of film is closely...

Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Kibyung, Park , Younghwan, Lee , Kyung Taek, Im , June Young, Lee , Sangwoo, Lim

HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350°C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.

Regiospecifity-driven self-assembly of methyl substituted quaterthiophenes at surface

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Manuela, Melucci , Massimo, Zambianchi , Francesca, Di Maria , Massimo, Gazzano , Magda, Monari , ...

A study on the self-assembly of regiochemically differentiated methyl substituted quaterthiophenes is presented. Hierarchical self-assembly of 5,4',3'',5'''-tetramethyl-2,2':5',2'':5'',2'''-quaterthiophene molecule, 7 leads to unprecedented fluorescent superstructures on glass and mica surfaces made by reiteration of a peculiar V-shaped recurring motif that extended at least for three generations.

Formation of polycrystalline-Si thin-film transistors with tunneling field-effect-transistor structure

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Miin-Horng, Juang , P.-S., Hu , S.L., Jang

Formation of poly-Si thin-film transistor (TFT) device with tunneling field-effect- transistor (TFET) structure has been studied. With scaling the gate length down to 1µm, the poly-Si TFT device with conventional metal-oxide-semiconductor-field-effect- transistor structure would be considerably degraded, which exhibits an off-state leakage of about 10nA/µm at a drain bias of 6V. The short channel effect would tend to cause the source/drain punch-through and also increase the lateral electric field within the channel region, thus enhancing the carried field emission via trap states. The TFET structure can be employed to alleviate the short channel effect in poly-Si TFT device. As a...

Study of compositional change in the interfacial regions between Lead Strontium Titanate/SiO2 and Lead Zirconate Titanate/SiO2 by Auger Emission Spectroscopy

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Arne, Lüker , Qi, Zhang , Paul B., Kirby

Auger spectroscopy was used to study the compositional change in the interfacial region between ferroelectric thin films, namely lead strontium titanate (PST) and lead zirconate titanate (PZT), and commercial available Si substrates with a 200 nm thick thermal oxide layer. Both PST and PZT thin films were prepared via a sol-gel spin coating method. The thin films from both materials were annealed under the same conditions (temperature and time). It was found that strontium stops the lead diffusion into SiO2 by forming SrSiO3/Sr2SiO4 and SrO, maintaining a well defined SiO2 region, while PbSiO3 is formed in the PZT/SiO2 system. These...

Synthesis and electrophosphorescent properties of iridium complexes based on 2-fluorenylquinoline derivatives

Tue, 11/17/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 17 November 2009
Kum Hee, Lee , Woochul, Lee , Min Kyu, Kim , Ji Hyun, Seo , Young Kwan, Kim , ...

A series of cyclometalated iridium complexes with 2-fluorenylquinoline derivative ligands were synthesized and their photophysical and electroluminescent properties examined using multilayered, organic light-emitting diodes fabricated with the complexes as dopant materials. In the device containing complex 3 dopant, the maximum luminance was 20200cd/m2 at 14V, the luminous and power efficiencies were 14.1cd/A and 11.0lm/W, respectively, and had CIE coordinates of (0.65, 0.35) which was close to saturated red emission.

Three-Dimensional Finite Element Analysis of Fracture Modes for the Pull-Off Test of A Thin Film from A Stiff Substrate

Mon, 11/16/2009 - 15:02
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 14 November 2009
Zuo, Sun , David A., Dillard

A three-dimensional geometrically nonlinear finite element analysis model is presented to study the interfacial delamination for the pull-off test of a thin film strip debonded from a stiff substrate. The strain energy release rates of all three modes (Mode I, Mode II, and Mode III) along the debond front are considered and calculated to investigate the mixed fracture modes for the entire deformation regime from bending plate to stretching membrane. These results indicate that the individual strain energy release rates and the total energy release rate vary along the width of the debond front and strong three-dimensional edge effects exist...

Correlation between isotropic ferromagnetic resonance field shift and rotatable anisotropy in polycrystalline NiFe/FeMn bilayers

Mon, 11/16/2009 - 15:02
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 14 November 2009
W.J., Fan , X.P., Qiu , Z., Shi , S.M., Zhou , Z.H., Cheng

Polycrystalline NiFe/FeMn bilayers were fabricated by dc magnetron sputtering and studied by ferromagnetic resonance and vibrating sample magnetometer. The isotropic resonance field shift and the rotatable anisotropy are correlated to each other because they both undergo the maximal values around 2.5 nm and then decrease with increasing the antiferromagnetic layer thickness. These results can be explained in terms of thermally activated transition of antiferromagnetic spins.

Low temperature ordering of FePt films by in-situ heating deposition plus post deposition annealing

Mon, 11/16/2009 - 15:02
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 14 November 2009
Y.S., Yu , Hai-Bo, Li , W.L., Li , Mei, Liu , Yu-Mei, Zhang , ...

FePt thin films with 40nm thickness were prepared on thermally oxidized Si (001) substrates by dc magnetron sputtering at the nominal growth temperature 375°C. The effects of annealing on microstructure and magnetic properties of FePt thin films were investigated. The as-deposited FePt thin films show soft magnetic properties. After the as-deposited FePt thin films were annealed at various temperatures and furnace cooled, it is found that the ordering temperature of L10 FePt phase could be reduced to 350°C. For FePt thin films annealed at 350°C, the in-plane and out-of-plane coercivities of the films increased to 510 and 543kA/m, respectively, and...

Development of new transparent conductors and device applications utilizing a multi disciplinary approach

Fri, 11/13/2009 - 15:13
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 13 November 2009
Bernd, Szyszka , Peer, Loebmann , Andreas, Georg , Christian, May , Christian, Elsaesser

Transparent and conductive films are key components for optoelectronic devices. They are applied as n-type transparent electrical contacts for inorganic and organic light emitting diodes, solar cells and flat panel displays as well as p- and n-type active semiconductive oxides to setup wide band gap p-n junctions and devices for the emerging field of transparent and radiation hard electronics.The demand for these films is strongly increasing due to the extensive market growth in these areas but the solutions available today only partially fulfill the requirements on low resistivity, high transmittance, large area deposition, low cost manufacturing, and ability for fine...

Corrigendum to “Electrical transport and structural study of CuCr1−xMgxO2 delafossite thin films grown by pulsed laser deposition” [Thin Solid Films 517 (2009) 3211–3215]

Wed, 11/11/2009 - 18:13
Publication year: 2009
Source: Thin Solid Films, In Press, Corrected Proof, Available online 10 November 2009
P.W., Sadik , M., Ivill , V., Craciun , D.P., Norton

Metal-Oxide-Semiconductor Characteristics of Thermally Grown Nitrided SiO2 Thin Film on 4H-SiC in Various N2O Ambient

Tue, 11/10/2009 - 16:18
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 10 November 2009
Kuan Yew, Cheong , Jeong Hyun, Moon , Hyeong Joon, Kim , Wook, Bahng , Nam-Kyun, Kim

Metal-oxide-semiconductor characteristics of thermally grown nitrided SiO2 (9-11.5nm) on n-type 4H-SiC at 1175°C in various N2O ambient (1, 10, and 50% N2O mixed with 99, 90, and 50% of high purity N2 gas, respectively) has been investigated. The chemical composition of oxide-semiconductor interface has been evaluated by X-ray photoelectron spectroscopy. The interfacial layer consists of either silicon oxynitride, silicon nitride, and/or silicon oxide phases that may be segregated or mixed in a single layer. Depending on the percentage of N2O being used, the stoichiometry may vary accordingly. The lowest leakage current density is recorded for thin film oxide grown in10%...

Reactive magnetron sputtering from a composite target for large area BaPbO3 thin film electrode

Tue, 11/10/2009 - 16:18
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 10 November 2009
V.S., Vidyarthi , G., Suchaneck , G., Gerlach , A.A., Levin , D.C., Meyer , ...

Radio frequency reactive magnetron sputtering from a composite target made of PbO pellets uniformly positioned on a metallic Ba disk has been utilized for BaPbO3 electrode deposition on 150mm Si wafers. The reactive sputtering process has been analyzed in relation to sputtering parameters for composite targets with different percentage of PbO coverage. The process optimization method for in situ crystallized BaPbO3 thin film fabrication has been emphasized. The growth of BaPbO3 films has been discussed from the viewpoint of the BaO-PbO phase diagram and thermodynamics of Ban+1PbnO3n+1 (n=1, 2, ∞) phase formation. The microstructure analysis of the deposited films has...

Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

Tue, 11/10/2009 - 16:18
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 10 November 2009
Liu, Lu , Xiao-liang, Xu , Chao-shu, Shi , Hai, Ming , Xi-feng, Ren , ...

Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200°C∼350°C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to...

Cyclic voltammetry and impedance studies of electrodeposited polypyrrole nanoparticles doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt

Tue, 11/10/2009 - 16:18
Publication year: 2009
Source: Thin Solid Films, In Press, Accepted Manuscript, Available online 10 November 2009
Sh. M., Ebrahim , M.M., Abd-El Latif , A.M., Gad , M.M., Soliman

Electrochemical synthesis of polypyrrole (PPY), doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt (AMPSNa), was carried out using chronoamperometric technique. Cyclic voltammetry measurements showed that the electroactivity of PPY films, doped with AMPSNa, increases with the film thickness. Scanning electron microscopy photographs revealed that the PPY particles are in the nano-scale range and that their size depends on the potential at which the PPY has formed. Electrochemical impedance spectroscopy (EIS), in the potential range of +1.0 and −1.0V, revealed in the PPY film charge transfer domination with a semicircle at high frequencies, and anion diffusion dominance at low frequencies. EIS also showed...
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