The Oxford Plasma Lab inductively-coupled plasma (ICP) reactive ion etching (RIE) system. The system can etch Si, Si3N4, SiO2, and a variety of metals with good selectivity to standard masking materials. This tool is capabile of cryogenic silicon etching, and high aspect ratio deep silicon etching (DRIE/Bosch/DSi, ~5:1).
SF6, C4F8, CHF3, CF4, Ar, O2
This instrument was acquired with support from the National Science Foundation under Grant No. 0722583