Low temperature silicon etch for high aspect ratio features
Microwave plasma O2+Ar slow ashing process used to remove residual photoresist.
|Bulk Silicon etch||
A process for anisotropic bulk etching of silicon wafers is available at MMF. A dedicated temperature controlled bath with a cooled lid is located in the Base/Litho bench. This bath has 0.1C temperature control and features a coolant loop around the bath lid acting as a condenser, preventing loss of etchant thereby maintaining etchant concentration.
|R1 S1813 on Si ashing||
No faraday cage; wafer in vertical position, centered in chamber
1.3um S1813 on 100mm Silicon wafer
|R2 S1813 on Al Ashing||
With faraday cage; wafer in vertical position, centered in chamber
1.3 uM S1813 on 100 mm Aluminum coated Silicon wafer
|R3 S1813 on Si Descum||
With faraday cage, wafer in vertical position, centered in chamber.
1.3 uM S1813 on 100 mm Silicon wafer.
2 min descum removes 45 +/- 6 nm
|R4 S1813 on Al Descum||
With faraday cage; wafer in vertical position, centered in chamber.
1.3 uM S1813 on Al coated Si wafter
4 min descum removes 21 +/- 15 nm
|Alumina Dry Etch Recipe||
-The Alumina etch utilizes a C4F8, CHF3 and Ar chemistry to slowly etch away the resistant alumina film.
|Chromium Dry Etch Recipe||
-The chromium dry etch recipe utilizes a chlorine and oxygen chemistry to etch the metal
|Silicon Dioxide Dry Etch Recipe||
-The Oxford Plasmalab ICP 100 etcher utilizes an etch chemistry of C4F8 and oxygen to etch the silicon dioxide while stopping quite well on microscope glass and Si.