|Cryogenic etch||Low temperature silicon etch for high aspect ratio features|
|O2 Descum||Microwave plasma O2+Ar slow ashing process used to remove residual photoresist.|
|Bulk Silicon etch||
A process for anisotropic bulk etching of silicon wafers is available at MMF. A dedicated
temperature controlled bath with a cooled lid is located in the Base/Litho bench.
This bath has 0.1C temperature control and features a coolant loop around the bath
lid acting as a condenser, preventing loss of etchant thereby maintaining etchant
|R1 S1813 on Si ashing||
No faraday cage; wafer in vertical position, centered in chamber
1.3um S1813 on 100mm Silicon wafer
|R2 S1813 on Al Ashing||
With faraday cage; wafer in vertical position, centered in chamber
1.3 uM S1813 on 100 mm Aluminum coated Silicon wafer
|R3 S1813 on Si Descum||
With faraday cage, wafer in vertical position, centered in chamber.
1.3 uM S1813 on 100 mm Silicon wafer.
2 min descum removes 45 +/- 6 nm
|R4 S1813 on Al Descum||
With faraday cage; wafer in vertical position, centered in chamber.
1.3 uM S1813 on Al coated Si wafter
4 min descum removes 21 +/- 15 nm
|Alumina Dry Etch Recipe||
|Chromium Dry Etch Recipe||
|Silicon Dioxide Dry Etch Recipe||
|Aluminum HBr Dry Etch Recipe||
|Aluminum Cl2 Dry Etch Recipe||
|Lithium Niobate Dry Etch Recipe||