• The Alumina etch utilizes a C4F8, CHF3 and Ar chemistry to slowly etch away the resistant alumina film.
  • The Oxford ICP 100 etcher is used with this chemistry and the etch rate has been measured to be about 50 nm/min
  • This gas chemistry will etch Si, so be sure to stop fairly quickly after the alumina is completely etched.
  • Surface roughness seems to vary on etch time. Be sure to measure with the Ambios Profilometer

Attached Documents

Alumina EtchOxford ICP Etcher