Alumina Dry Etch Recipe
- The Alumina etch utilizes a C4F8, CHF3 and Ar chemistry to slowly etch away the resistant alumina film.
- The Oxford ICP 100 etcher is used with this chemistry and the etch rate has been measured to be about 50 nm/min
- This gas chemistry will etch Si, so be sure to stop fairly quickly after the alumina is completely etched.
- Surface roughness seems to vary on etch time. Be sure to measure with the Ambios Profilometer