Oxford ICP Etcher
  • The Oxford Plasmalab ICP 100 uses a gas chemistry of chlorine for the initial aluminum oxide breakthrough and then HBr gas to etch the Al.
  • The etch rate has be measure at about 1075 nm/min for a thick film of Al with a thickness of 2.7um.
  • This gas chemistry will etch Si so silicon dioxide is needed to stop the etching beneath the Al.

Attached Documents