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Photolithographic Process for AZ 3312 Positive Photoresist on Aluminum Coated Substrates

  1. Clean Al Coated Substrates
    1. Heat AZ KWIK Strip Remover to 60 °C.
    2. When bath is at temperature, place Al coated substrate in dish and start 10 minute timer.
    3. When time is complete, take substrate out of KWIK Strip and wash off with deionized water. Blow dry with nitrogen gun.
  2. Dehydration Bake
    1. Place cleaned Al coated substrate on vacuum hot plate, and perform a dehydration bake for 10 minutes at 150 °C. Let the substrate cool to room temperature after bake.
  3. Spin Coat Substrate with AZ 3312
    1. When substrate reaches room temperature, load a substrate on a prepped Headway or Brewer spin coater.
    2. Choose the proper recipe, recipe 8 for the Headway spinner. The resist is spun at 4000 rpm to give a thickness of about 1.10 µm before baking, or 1.07 µm after baking.
    3. Dispense AZ 3312, about 6 mL per 4” wafer, during the spin coating.
  4. Soft Bake
    1. Soft bake for 1 minute at 90 °C on a vacuum hot plate.
  5. Expose Wafer in the Contact Aligner
    1. Expose for 2.6 seconds without any filter for optimum exposure dose. Channel A of the contact aligner is set at 15 mW/cm2.
    2. Perform 1 minute, 90 °C post exposure bake following exposure on contact aligner. Let cool to room temperature before development.
  6. Develop Wafer
    1. Develop wafer for 40 seconds in AZ 726 MIF Developer.
    2. Wash with deionized water to completely remove developer, and blow dry with nitrogen gun.
  7. Hard Bake
    1. Hard bake for 3 minutes at 90 °C on a vacuum hot plate.

Attached Documents